Fabrication method of pixel structure and thin film transistor

Details Fabrication method of pixel structure and thin film transistor Fabrication method of pixel structure and thin film transistor

2011-01-18

2011-01-18

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000

Reexamination Certificate

active

07872260

ABSTRACT:
A method of fabricating a thin film transistor is disclosed. First, a substrate is provided and a patterned polysilicon layer is formed on the substrate. A metal layer is formed on the patterned polysilicon layer. Then, a portion of the metal layer is removed so that the remaining metal layer beside the patterned polysilicon layer forms a source and a drain. A gate insulation layer is formed on the substrate to cover the source, the drain and the patterned polysilicon layer. A gate is formed on the gate insulation layer over the patterned polysilicon layer.

REFERENCES:
patent: 2005/0093065 (2005-05-01), So
patent: 2005/0095758 (2005-05-01), So
patent: 2005/0105037 (2005-05-01), Kim et al.
patent: 2005/0116225 (2005-06-01), Yamazaki et al.
patent: 2007/0236625 (2007-10-01), Wang et al.

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