Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-01-18
2005-01-18
Everhart, Caridad (Department: 2825)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S094000, C257S200000, C257S103000, C257S096000, C257S097000, C257S099000, C257S089000, C438S046000, C438S047000
Reexamination Certificate
active
06844569
ABSTRACT:
The present invention relates to a fabrication method of nitride-based semiconductors and a nitride-based semiconductor fabricated thereby. In the fabrication method of the invention, a self-organizing metal layer is formed on a sapphire substrate. The sapphire substrate having the self-organizing metal layer is heated so that self-organizing metal coalesces into nanoscale clusters to irregularly expose an upper surface of the sapphire substrate. Exposed portions of the sapphire substrate is plasma etched using the self-organized metal clusters as a mask to form a nanoscale uneven structure on the sapphire substrate. A resultant structure is wet etched to remove the self-organized metal clusters. The nanoscale uneven structure formed on the sapphire substrate decreases the stress and resultant dislocation between the sapphire substrate and a nitride-based semiconductor layer as well as increases the quantum efficiency between the same.
REFERENCES:
patent: 3941647 (1976-03-01), Druminski
patent: 5952681 (1999-09-01), Chen
patent: 20030057444 (2003-03-01), Niki et al.
patent: 20030189215 (2003-10-01), Lee et al.
Kim Je Won
Kim Sun Woon
Lee Kyu Han
Everhart Caridad
Lowe Hauptman & Gilman & Berner LLP
Samsung Electro-Mechanics Co. Ltd.
Yevsikov Victor V
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