Fabrication method of light emitting diode incorporating...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S665000, C438S964000

Reexamination Certificate

active

10953815

ABSTRACT:
The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.

REFERENCES:
patent: 6649440 (2003-11-01), Krames et al.
patent: 6821804 (2004-11-01), Thibeault et al.
patent: 2004/0038049 (2004-02-01), Suzuki et al.
patent: 2004/0048471 (2004-03-01), Okagawa et al.
patent: 2004/0113166 (2004-06-01), Tadatomo et al.
patent: 2000-106455 (2000-04-01), None
patent: 2002-164296 (2002-06-01), None
patent: 2002-280609 (2002-09-01), None
patent: 2002-280611 (2002-09-01), None

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