Fabrication method of light emitting diode

Details Fabrication method of light emitting diode Fabrication method of light emitting diode

2009-08-18

2011-12-06

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S962000, C977S755000, C257SE33032

Reexamination Certificate

active

08071409

ABSTRACT:
A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped semiconductor layer. A process for forming the light emitting layer includes alternately forming a plurality of barrier layers and a plurality of quantum well layers on the first type doped semiconductor layer. The quantum well layers are formed at a growth temperature T1, and the barrier layers are formed at a growth temperature T2, where T1<T2. Then, a second type doped semiconductor layer is formed on the light emitting layer.

REFERENCES:
patent: 7091514 (2006-08-01), Craven et al.
patent: 7186302 (2007-03-01), Chakraborty et al.
patent: 2005/0214992 (2005-09-01), Chakraborty et al.
patent: 2007/0012932 (2007-01-01), Kobayakawa et al.
patent: 2007/0026551 (2007-02-01), Sato et al.

Affiliated with

Also associated with

Rating

Fabrication method of light emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method of light emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of light emitting diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4315587