Fabrication method of inductor devices using a substrate convers

Details Fabrication method of inductor devices using a substrate convers Fabrication method of inductor devices using a substrate convers

1998-09-30

2000-11-28

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

438409, H01L 2120

Patent

active

061534897

ABSTRACT:
A fabrication method of high performance integrated inductor devices using a substrate conversion technique is disclosed. By employing the trench-shaped porous silicon with high insulating property, the lossy characteristic of the silicon substrate is essentially to minimize. Also, by employing the conductive doped layer interposed between the porous silicon layer and the silicon substrate, the parasitic capacitance between metal lines and the silicon substrate is remarkably decreased. The present invention allows fabrication of high performance integrated inductors having high quality factor. Also, this invention prevents mutual-coupling between the silicon substrate and metal lines. As a result, integrated inductor devices according to this invention is readily adaptable for use in radio frequency integrated circuit (RF IC).

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J. Y. C. Change et al., "Large Suspended Inductors on Silicon and Their Use in a 2-.mu.m CMOS RF Amplifier", 1993 IEEE, pp. 246-248.
J. N. Burghartz et al., "Monolithic Spiral Inductors Fabricated Using a VLSI Cu-Damascene Interconnect Technology and Low-Loss Substrates", 1996 IEEE, pp. IEDM96-99--IEDM96-102.

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