Fabrication method of high-brightness light emitting diode...

Details Fabrication method of high-brightness light emitting diode... Fabrication method of high-brightness light emitting diode...

2008-06-10

2008-06-10

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S022000, C438S045000, C257SE21016

Reexamination Certificate

active

07384808

ABSTRACT:
A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a light generating structure, a non-alloy ohmic contact layer, and a first metallic layer from bottom to top on a side of a first substrate. Then, a second layered structure comprising at least a second substrate is provided. Then, the two-layered structures are wafer-bonded together, with the top side of the second layered structure interfacing with the top side of said first layered structure. The first metallic layer functions as a reflective mirror, which is made of a pure metal or a metal nitride to achieve superior reflectivity, and whose reflective surface does not participate in the wafer-bonding process directly.

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“A1GaInp light-emitting diodes with mirror substrates fabricated by wafer bonding”, Applied Physics Letters, Nov. 15, 1999, vol. 75, Issue 20, pp. 3054-3056.

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