Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Crucibleless process having movement of discrete droplets or...
Patent
1993-04-30
1995-01-17
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Crucibleless process having movement of discrete droplets or...
117931, 117935, 117921, 117938, C30B 2300
Patent
active
053817532
ABSTRACT:
A fabrication method provides fine structures which have few carrier trap centers and light absorption levels and find applications in quantum wires and quantum boxes having arbitrary configurations at least within a two-dimensional plane. The fabrication method comprises the steps of having a sharp tip held in close proximity to the surface of a substrate 1 and having a metal constituting the tip evaporated from the top. Alternatively, a metal contained in ambient vapor or a solution decomposed by a tunnel current or the like is provided. The metal is deposited locally on the substrate surface. A finely structured crystal is grown on the locally deposited region by a vapor phase-liquid phase-solid phase reaction.
REFERENCES:
patent: 3580732 (1971-05-01), Blakeslee et al.
patent: 3632405 (1972-01-01), Knippenberg et al.
patent: 3635753 (1972-01-01), Arthur et al.
patent: 4058418 (1977-11-01), Lindmayer
patent: 4099986 (1978-07-01), Diepers
Wagner et al., "The Vapor-Liquid Solid Mechanism of Crystal Growth and Its Application to Silicon", Transactions of the Metallurgical Society of AIME vol. 233 Jun. 1965 pp. 1053-1064.
R. S. Wagner & W. C. Ellis, "Vapor-Liquid-Solid Mechanism of Single Crystal Growth", Applied Physics Letters, vol. 4, No. 5, pp. 89-90 (Mar. 1964).
Kusumoto Osamu
Okajima Michio
Shibata Motoshi
Tohda Takao
Yokoyama Kazuo
Kunemund Robert
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Fabrication method of fine structures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication method of fine structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of fine structures will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-741687