Etching a substrate: processes – Forming or treating an article whose final configuration has...
Patent
1995-07-11
1997-06-03
Powell, William
Etching a substrate: processes
Forming or treating an article whose final configuration has...
216 41, 216 67, 216 75, 216 76, B44C 122
Patent
active
056350813
ABSTRACT:
In a fabrication method of a field-emission cold cathode, a conductive material for an emitter is first deposited on a Si substrate and then dry etched to form a conical emitter. An insulating layer and a gate electrode are deposited in such a manner as to cover over the emitters, and the surfaces of the emitters are flattened with a resist. Then, the insulating layer and the gate electrode are opened by etching back to expose the end of the conical emitter. Ta can be used as the conductive material to be deposited on the Si substrate. Meanwhile, the insulating layer to be deposited on the emitter can be formed by anodic oxidation. Further, where the height of the surface of the gate electrode from the surface of the Si substrate is set equal to the height of the emitter, detection of the end point at the later etching back step is facilitated.
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patent: 5228877 (1993-07-01), Allaway et al.
patent: 5399238 (1995-03-01), Kumar
C.A. Spindt, C.E. Holland, A. Rosengreen and Ivor Brodie--Title: Field-Emitter Array for Vacuum Microelectronics--Document: IEEE Transactions on Electron Device, pp. 2355-2363, vol. 38, No. 10, Oct. 1991.
M. Urayama, Y. Maruo, Y. Akagi, T. Ise--Title: Fabrication of Cone-Like Field Emitters--Document: Digest of 53rd Science Lecture Meeting of Applied Physics, 19A-ZM-6, p. 553, Sep. 22, 1992, Published by: The Applied Physics Society in Japan.
NEC Corporation
Powell William
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