Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2011-08-23
2011-08-23
Sarkar, Asok K (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257SE21400, C438S478000, C438S492000, C438S503000, C438S507000, C438S800000, C977S742000, C977S891000
Reexamination Certificate
active
08004018
ABSTRACT:
A layer of high aspect ratio nanoparticles is disposed on a surface of a substrate under the influence of an electrical field applied on the substrate. To create the electrical field, a voltage is applied between a pair of electrodes arranged near the substrate or on the substrate, and the high aspect ratio nanoparticles disposed on the substrate are at least partially aligned along direction(s) of the applied electrical field. The high aspect ratio nanoparticles are grown from catalyst nanoparticles in an aerosol, and the aerosol is directly used for forming the nanoparticle layer on the substrate at room temperature. The nanoparticles may be carbon nanotubes, in particular single wall carbon nanotubes. The substrate with the layer of aligned high aspect ratio nanoparticles disposed thereon can be used for fabricating nanoelectronic devices.
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Nokia Corporation
Sarkar Asok K
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