Fabrication method of bipolar transistor

Details Fabrication method of bipolar transistor Fabrication method of bipolar transistor

1988-09-26

1989-10-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 57 35, 14DIG10, H01L 21225

Patent

active

048747122

ABSTRACT:
Present invention relates to the fabrication method of the bipolar transistor.
With this method the emitter of high-concentrated n-type is contacted closely to the extrinsic base of high-concentrated p-type.
This structure is obtained by making the emitter of the bipolar transistor be self- aligned by the side wall under-cut of the nitride layer using double layers of the low temperature oxide and the nitride layer.

REFERENCES:
patent: 4125426 (1978-11-01), Inayoshi et al.
patent: 4295898 (1981-10-01), Yoshida et al.
patent: 4375999 (1983-03-01), Nawata et al.
patent: 4483738 (1984-11-01), Blossfeld
patent: 4581319 (1986-04-01), Wieder et al.

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