Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-05-02
2006-05-02
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S029000, C438S069000
Reexamination Certificate
active
07037739
ABSTRACT:
A fabrication method of an epilayer structure for InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency. It relates to a P-p-n-N InGaAsP/InP ridge waveguide phase modulator fabricated to be that the phase change of the TE-mode is linearly proportional to the reverse bias voltage at 1.55 μm wavelength. A method for fabricating an epilayer structure for achieving the optical confinement in the vertical direction of an InGaAsP/InP waveguide phase modulator, characterized by comprising the steps of: forming a first cladding layer of N-InP on an N+-InP substrate; forming a first waveguide layer of n-InGaAsP and a second waveguide layer of p-InGaAsP in sequence on the first cladding layer; forming a second cladding layer of P-InP and a third cladding layer of P-InP in sequence on the second waveguide layer; and forming an electrode layer of p+InGaAs on the third cladding layer.
REFERENCES:
patent: 6465269 (2002-10-01), Furushima
patent: 6477283 (2002-11-01), Shimizu et al.
patent: 2003/0098475 (2003-05-01), Ueda
Byun Young Tae
Lee Seok
Park Hwa Sun
Woo Deok Ha
Yi Jong Chang
Harness & Dickey & Pierce P.L.C.
Kennedy Jennifer
Korea Institute of Science and Technology
Lee Kyoung
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