Fabrication method of an electrostatic discharge protection...

Details Fabrication method of an electrostatic discharge protection... Fabrication method of an electrostatic discharge protection...

2005-02-15

2005-02-15

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S322000, C257S355000

Reexamination Certificate

active

06855611

ABSTRACT:
A fabrication method of an electrostatic discharge protection circuit is described, in which a buried layer is formed in the substrate of the electrostatic discharge protection circuit, and a sinker layer electrically connected to the buried layer and a drain is also formed therein. Thereby, when the electrostatic discharge protection circuit is activated, the current flows from a source through the buried layer and the sinker layer to the drain. The current flow path is remote from the gate dielectric layer to avoid damaging the gate dielectric by a large current, so as to improve the dielectric strength of the electrostatic discharge protection circuit.

REFERENCES:
patent: 4574469 (1986-03-01), Mastroianni et al.
patent: 5581103 (1996-12-01), Mizukami
patent: 6159841 (2000-12-01), Williams et al.
patent: 6303964 (2001-10-01), Pulvirenti et al.
patent: 6365932 (2002-04-01), Kouno et al.
patent: 6424013 (2002-07-01), Steinhoff et al.

Affiliated with

Also associated with

Rating

Fabrication method of an electrostatic discharge protection... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method of an electrostatic discharge protection..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of an electrostatic discharge protection... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3477801