Fabrication method of a semiconductor laser device

Details Fabrication method of a semiconductor laser device Fabrication method of a semiconductor laser device

2005-08-23

2005-08-23

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S424000, C438S425000, C438S426000, C438S427000

Reexamination Certificate

active

06933159

ABSTRACT:
In a method for fabricating a semiconductor laser device, a plurality of grooves are formed in a surface of one conductive type of an InP layer. The InP layer is thermally treated in an atmosphere including at least a gas containing phosphorus and a gas containing arsenic in a mixed state, thereby forming a plurality of active regions made of InAsP in the plurality of grooves. An other conductive type of semiconductor layer is formed after the active regions are formed.

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