Fabrication method of a polarization selective semiconductor las

Details Fabrication method of a polarization selective semiconductor las Fabrication method of a polarization selective semiconductor las

1999-06-24

2000-03-28

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 31, 438 47, 372 50, 257 94, H01L 2100

Patent

active

060431040

ABSTRACT:
A fabrication method of a semiconductor laser capable of controlling a polarization mode of output light is disclosed. In the fabrication method, after two laser portions are independently formed, the laser portions are positioned to be optically coupled to each other. In another fabrication method of the laser, after at least portions of two laser portions are separately formed, an irregularly-formed portion at a boundary portion therebetween is removed. The fabrication method can be facilitated and a degree of freedom in the polarization control can be increased, since the two laser portions are separately formed.

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