Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Patent
1995-12-04
1998-04-07
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
438623, 438637, 438656, 438780, H01L 2120
Patent
active
057364486
ABSTRACT:
A capacitor is fabricated on a base surface by applying a first pattern of electrical conductors (a first capacitor plate) over the base surface with an outer surface of the first pattern of electrical conductors including molybdenum. A first hard portion of a capacitor dielectric layer including amorphous hydrogenated carbon is deposited over the first capacitor plate and the base surface, a soft portion of the capacitor dielectric layer is deposited over the first hard portion, and a second hard portion of the capacitor dielectric layer is deposited over the soft portion. The deposition of the soft portion occurs at a lower bias voltage than the deposition of the first and second hard portions. A second pattern of electrical conductors (a second capacitor plate) is applied over the capacitor dielectric layer which is then patterned. A polymer layer is applied over the first and second capacitor plates, and two vias are formed, a first via extending to the first capacitor plate and a second via extending to the second capacitor plate. An electrode-coupling pattern of electrical conductors is applied over the polymer layer, a first portion extending into the first via and a second portion extending into the second via. Deposition of the capacitor dielectric layer can include using a methylethylketone precursor. Additional capacitor dielectric layers and plates having staggered via landing pads can be layered to increase the capacitance.
REFERENCES:
patent: 4376329 (1983-03-01), Behn
patent: 4378382 (1983-03-01), Behn
patent: 4481283 (1984-11-01), Kerr et al.
patent: 4508049 (1985-04-01), Behn et al.
patent: 4603059 (1986-07-01), Kiyosumi et al.
patent: 5036020 (1991-07-01), Tigelaar
patent: 5250451 (1993-10-01), Chouan
patent: 5262201 (1993-11-01), Chandra et al.
patent: 5480686 (1996-01-01), Rudder et al.
patent: 5516500 (1996-05-01), Liu et al.
patent: 5563762 (1996-10-01), Leung et al.
patent: 5569487 (1996-10-01), De Vre et al.
patent: 5576925 (1996-11-01), Gorowitz et al.
patent: 5638251 (1997-06-01), Goel et al.
"Advanced Materials for High Energy Density Capacitors" By SJ Rzad, et al 1993 IEEE 35th International Power Sources Symposium, Jun. 22-25, 1992, pp. 358-362.
"A New High Temperature Multilayer Capacitor With Acrylate Dielectrics" By Angelo Yializis, et al, IEEE Dec. 1990, vol. 13, No. 4, pp. 611-615.
"Dielectric Properties of Carbon Films From Plasma Enhanced Chemical Vapor Deposition", by J. L. Davidson, et al, Proc Electrochem. Soc. vol. 89-12, pp. 306-316.
"Multilewvel DLC (Diamondlike Carbon) Capacitor Structure", JL Davidson et al, SPIE vol. 871, Space Structures, Power & Power Conditioning (1988) pp. 308-312.
Durocher Kevin Matthew
Gorowitz Bernard
Saia Richard Joseph
Agosti Ann M.
Bowers Jr. Charles L.
General Electric Company
Snyder Marvin
Thomas Toniae M.
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