Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – And gettering of substrate
Reexamination Certificate
2007-06-12
2007-06-12
Tran, Minh-Loan (Department: 2826)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
And gettering of substrate
C438S473000, C438S475000, C257SE29109
Reexamination Certificate
active
09800213
ABSTRACT:
Semiconductor devices have device regions in which semiconductor properties such as spreading resistivity and its profile are significant. In making a p-type device region on a semiconductor wafer, an initial semiconductor device region is defined by a buried region, and an initial spreading resistivity profile is developed by annealing. After annealing, semiconductor device properties can be enhanced by removing a surface sub-region of the initial device region, and can be further improved by epitaxially growing thereon a monocrystalline film as an improved channel layer for FET devices. Such properties are relevant in MOS as well as bipolar devices.
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Businger Peter A.
Tran Minh-Loan
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