Fabrication method for semiconductor devices and transparent mas

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, H01J 3704

Patent

active

050362097

ABSTRACT:
A charged particle beam exposure apparatus includes a charged particle beam generator, a deflector device for deflecting the charged particle beam electromagnetically to individually illuminate small areas of a pattern forming region formed on a transparent mask, apparatus for moving the transparent mask mechanically, and the various components required for reducing the charged particle beam pattern through the mask and projecting the same onto a semiconductor device substrate to be exposed. A semiconductor device is fabricated using such apparatus by moving the mask mechanically to position a pattern forming region at a predetermined exposure position. The pattern forming region includes a plurality of small areas which can be individually selected by deflecting the charged particle beam when the pattern forming region is positioned at the exposure position. Each individual area is of a size such that the entirety thereof is exposed when the beam is deflected onto such area.

REFERENCES:
patent: 4140913 (1979-02-01), Anger et al.
patent: 4169230 (1979-09-01), Bohlen et al.
patent: 4213053 (1980-07-01), Pfeiffer

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