Fabrication method for semiconductor devices

Details Fabrication method for semiconductor devices Fabrication method for semiconductor devices

1991-07-12

1994-03-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 28, 437162, 437191, 148DIG11, 148DIG124, H01L 21265

Patent

active

052963888

ABSTRACT:
A fabrication method for semiconductor devices connecting a multi-crystal semiconductor thin film and a semiconductor region including a high density of an impurity formed in a single crystal semiconductor substrate. After forming a N-type semiconductor region as the emitter by ion implanting, for instance, as into a P-type semiconductor region as the base, a polysilicon thin film 114 is deposited so as to be implanted with As ions and then heat treated. In this case, an amorphous portion of the N-type semiconductor region and an amorphous silicon thin film in contact therewith are transformed by solid phase epitaxial growth so as to form a single crystal semiconductor region, a single-crystalline silicon thin film, and a polysilicon thin film, thus forming a bipolar element having an emitter.

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Ozono et al., "Redistribution of Heavily Doped Arsenic in Poly-SI Film on Single Silicon Substrate During its Solid Phase Epitaxial Growth", Semiconductor Silicon Proceedings, vol. 90-7, pp. 515-522 (1990).

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