Fabrication method for semiconductor device

Semiconductor device manufacturing: process – With measuring or testing – Packaging or treatment of packaged semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S017000

Reexamination Certificate

active

07919336

ABSTRACT:
A semiconductor device fabrication method can improve yield of semiconductor devices and decrease (or prevent) waste of non-defective semiconductor chips. This fabrication method has a step of performing characteristic inspection after packaging a semiconductor chip every time a semiconductor chip layer is formed. The fabrication method makes another semiconductor chip layer on this semiconductor chip layer only when the inspection indicates that the semiconductor chip is a non-defective product.

REFERENCES:
patent: 6958544 (2005-10-01), Sunohara
patent: 7053475 (2006-05-01), Akagawa
patent: 7507602 (2009-03-01), Sunohara
patent: 2001/0008794 (2001-07-01), Akagawa
patent: 2002/0146859 (2002-10-01), Akagawa
patent: 2005/0212126 (2005-09-01), Sunohara
patent: 2009/0008765 (2009-01-01), Yamano et al.
patent: 2010/0052187 (2010-03-01), Lee et al.
patent: 2001-135787 (2001-05-01), None
patent: 2001-196525 (2001-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fabrication method for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2704779

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.