Fabrication method for semiconductor device

Details Fabrication method for semiconductor device Fabrication method for semiconductor device

1996-07-29

1998-03-03

Niebling, John

Fishing, trapping, and vermin destroying

437 34, 437 46, H01L 2170

Patent

active

057233560

ABSTRACT:
A first Poly-Si film and an a-Si film are formed on a semiconductor base body at a first step, and phosphorus ions (N-type impurity) are implanted in the a-Si film at an NMOS forming region and boron ions (P-type impurity) are implanted in the a-Si film at a PMOS forming region at a second step. The a-Si film is crystallized to form a second Poly-Si film and at the same time the impurities are diffused in the second Poly-Si film thus obtained and the first Poly-Si film at a third step. After that, a WSi.sub.x film is formed on the second Poly-Si film at a fourth step, and an offset oxide film is formed on the WSi.sub.x film at a fifth step. With this method, it is possible to suppress mutual diffusion of impurities having conducting types different from each other and hence to fabricate a semiconductor device such as a CMOS, which is low in variations in threshold voltage and excellent in device characteristics.

REFERENCES:
patent: 5180690 (1993-01-01), Czubatyj et al.
patent: 5459101 (1995-10-01), Fujii et al.
Fujii, Toyokazu, et al., "Dual (n+/p+) Polycide Gate Technology Using Si-rich WSix to Exterminate Lateral Dopant Diffusion", 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 117-118.

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