Fabrication method for quantum devices in compound semiconductor

Details Fabrication method for quantum devices in compound semiconductor Fabrication method for quantum devices in compound semiconductor

1992-07-13

1994-01-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437107, 437132, 437133, 437 22, 257 14, 257 22, 257 78, H01L 21265

Patent

active

052815439

ABSTRACT:
Disclosed is a new method suitable for making highly integrated quantum wire arrays, quantum dot arrays in a single crystal compound semiconductor and FETs of less than 0.1 micron gate length. This makes it possible to construct a high-performance electronic device with high speed and low power consumption, using a combination of low-temperature-growth molecular beam epitaxy (LTG-MBE) and focused ion beam (FIB) implantation. The compound semiconductor (GaAs) epitaxial layers, which are made by LTG-MBE, are used as targets of Ga FIB implantation to make Ga wire or dot arrays. Precipitation of arsenic microcrystals, which are initially embedded in a single crystal GaAs layer and act as Schottky barriers, are typically observed in an LTG GaAs layer. A thermal annealing process, after implantation, changes the arsenic microcrystals to GaAs crystals if the arsenic microcrystals are in the region in which the Ga ions are implanted. A wire-like shape free of As microcrystals then acts as a quantum wire for electrons or holes whereas a dot-like shape free of As microcrystals acts as a quantum dot. The co-existence of Ga ions and dopant ions, which provides conductivity type carriers opposite to the conductivity type of the majority carriers of a channel region of an FET, provides the fabrication of very narrow junction gate region for any FET.

REFERENCES:
patent: 4503447 (1985-03-01), Iafrate et al.
Warren et al. "Arsenic precipitates and the semi-insulating properties of GaAs Buffer layers grown by low-temp. MBE" in Appl. Phys. Letts 57(13), 1331-3 (1990).
Smith et al. "New MBE Buffer used to eliminate backgating in GaAs MOSFET's" in IEEE Electron Device Letters 9, 77-79 (1988).

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