Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component
Reexamination Certificate
2006-12-19
2006-12-19
Smith, Bradley (Department: 2891)
Semiconductor device manufacturing: process
Having selenium or tellurium elemental semiconductor component
C438S093000, C257SE21068
Reexamination Certificate
active
07151008
ABSTRACT:
A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes is disclosed. The method includes depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.
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Ashton Gary R.
Bicknell-Tassius Robert N.
Gibson Gary A.
Hewlett--Packard Development Company, L.P.
Smith Bradley
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