Fabrication method for phase change diode memory cells

Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component

Reexamination Certificate

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C438S093000, C257SE21068

Reexamination Certificate

active

07151008

ABSTRACT:
A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes is disclosed. The method includes depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.

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