Fabrication method for modified planar semiconductor structures

Details Fabrication method for modified planar semiconductor structures Fabrication method for modified planar semiconductor structures

1986-11-21

1988-03-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437133, 437 59, 156656, H01L 3118

Patent

active

047299630

ABSTRACT:
A process for fabricating a semiconductor device or a semiconductor substrate having a first major surface on which active semiconductor devices are to be formed, and a second major surface. An etch stop layer is provided on the first major surface. A layer of semiconductor material is deposited on the etch stop layer and portions of the substrate are selectively removed to provide a pattern of apertures in the layer extending to the etch stop layer. Dopant species are provided through the second major surface to form active regions in the layer of semiconductor material.

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