Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state
Patent
1996-11-12
1998-07-14
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to conductive state
438130, 438653, 438656, 438657, 438661, 438633, 438634, 438636, H01L 2182
Patent
active
057803234
ABSTRACT:
According to a first aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer under a plug of an electrically conductive material disposed between two metallization layers. According to a second aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer comprising a first nitride/first amorphous silicon/second nitride/second amorphous silicon sandwich under a plug of an electrically conductive material lined with titanium disposed between two metallization layers. In this aspect of the invention the titanium is allowed to react with the second amorphous silicon layer to form an electrically conductive silicide. This leaves the first nitride/first amorphous silicon/second nitride as the antifuse material layer while guaranteeing a strict control on the thickness of the antifuse material layer for assuring strict control over its respective breakdown or programming voltage. According to a third aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer disposed over a plug of an electrically conductive material disposed between two metallization layers.
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Rhavind
Forouhi Abdul R.
Hawley Frank W.
McCollum John L.
Yen Yeouchung
Actel Corporation
Nguyen Tuan H.
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