Fabrication method for mask ROM

Details Fabrication method for mask ROM Fabrication method for mask ROM

1996-12-27

1997-11-18

Tsai, Jey

Fishing, trapping, and vermin destroying

437 45, 437 52, H01L 218246

Patent

active

056886616

ABSTRACT:
A fabrication method for a mask ROM which is capable of embodying a high speed of the mask rom by reducing a resistance of a diffusion buried layer of a semiconductor memory device having a flat structure, includes the steps of forming a diffusion buried layer on a semiconductor substrate, forming a silicide layer on the diffusion buried layer and forming a first insulating layer on the silicide layer, forming a pattern including the first insulating layer, the silicide layer and the diffusion buried layer by forming and patterning a photoresist layer on the first insulating layer, forming sidewall spacers at both sides of the pattern, forming and patterning a polysilicon layer on the entire resultant surface of the semiconductor substrate, and performing a data coding on a predetermined portion of the semiconductor substrate.

REFERENCES:
patent: 5362662 (1994-11-01), Yuichi
patent: 5523251 (1996-06-01), Hong
patent: 5589414 (1996-12-01), Wann et al.
patent: 5610092 (1997-03-01), Tasaka

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