Fabrication method for III-V heterostructure field-effect transi

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437 29, 437 40, 437126, 437 65, 437228, 437981, 437984, 156644, 257276, H01L 2120

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053648161

ABSTRACT:
A heterojunction device, and a method for producing the device. A gate air bridge is formed at the mesa sidewall between the active region and the gate bonding pad to lower the gate leakage current. The device has a double recessed gate to reduce local fields in the vicinity of the gate. The fabrication method uses dielectric intermediate and final passivation layers to optimize the double-recess profile and control the extension of the high-field region between the gate and the drain. This combination increases the breakdown potential of the device, but minimizes the effective gate length of the device, preserving high frequency performance.

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