Fabrication method for horizontal direction semiconductor PN jun

Details Fabrication method for horizontal direction semiconductor PN jun Fabrication method for horizontal direction semiconductor PN jun

1996-12-27

1999-03-16

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

438 43, 438 44, 438 45, 438504, 438506, 438524, 438681, 438745, 438912, 438915, 148DIG42, 148DIG50, 148DIG56, 148DIG168, H01L 2100, H01L 2136, H01L 2120, H01L 21425

Patent

active

058829504

ABSTRACT:
A fabrication method for a horizontal direction semiconductor PN junction array which can be achieved when an epitaxial layer is grown by a metalorganic chemical vapor deposition (MOCVD method) by introducing (or doping) a small amount of CCl.sub.4 or CBr.sub.4 gas, includes forming a recess on an N type GaAs substrate by using a non-planar growth, performing a growth method of a P type epitaxial layer on the N type GaAs substrate by a metalorganic chemical vapor deposition method, and forming a horizontal direction PN junction array of P-GaAs/N-GaAs or P-AlGaAs/N-GaAs by introducing a gas comprising CCl.sub.4 or CBr.sub.4 .

REFERENCES:
patent: 3998672 (1976-12-01), Miyoshi et al.
patent: 4839307 (1989-06-01), Imanaka et al.
patent: 5010556 (1991-04-01), Imanaka et al.
patent: 5693963 (1997-12-01), Fujimoto et al.

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