Metal treatment – Compositions – Heat treating
Patent
1981-07-30
1983-06-21
Smith, John D.
Metal treatment
Compositions
Heat treating
29571, 156653, 156657, 427 89, 427 93, H01L 21285
Patent
active
043892574
ABSTRACT:
A method of providing self-passivating interconnection electrodes for semiconductor devices which provides low resistivity composite polysiliconsilicide electrodes. In the method the formation of oxidation induced voids in polysilicon underlying the silicide is eliminated by deposition of polysilicon and stoichiometric proportions of silicon and a silicide-forming metal. These steps are followed by deposition of a silicon layer having a thickness determined to provide between 30 and 100 percent of the silicon required to form a silicon dioxide passivation layer. Subsequent thermal oxidation of the layered electrode structure provides a self-passivated structure useful for fabrication of silicon gate MOSFET devices as well as other integrated circuit structures.
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Geipel, Jr. Henry J.
Hsieh Ning
Koburger, III Charles W.
Nesbit Larry A.
International Business Machines - Corporation
Smith John D.
Walter, Jr. Howard J.
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