Fabrication method for fully landing subminimum features on mini

Details Fabrication method for fully landing subminimum features on mini Fabrication method for fully landing subminimum features on mini

1998-02-23

1999-11-30

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

438462, 438689, H01L 2176

Patent

active

059941987

ABSTRACT:
A method for forming a multilayer structure having a dimension at most substantially equal to the minimum printable image wherein a substrate structure including a lithographic feature having a first minimum printable image dimension has a layer of hybrid photoresist disposed thereon above the lithographic feature of the substrate. A mask is provided over the hybrid photoresist layer with the mask having an edge aligned with the lithographic feature to within the tolerance of the semiconductor processing technology. The hybrid photoresist layer is exposed through the mask and developed to provide a window opening in the photoresist layer which is at most substantially equal to the minimum printable image.

REFERENCES:
patent: 4767723 (1988-08-01), Hinsberg, III et al.
patent: 5501926 (1996-03-01), Cheng et al.
patent: 5776660 (1998-07-01), Hakey et al.

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