Fabrication method for forming a self-aligned contact window and

Details Fabrication method for forming a self-aligned contact window and Fabrication method for forming a self-aligned contact window and

1986-10-03

1988-03-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

357 236, 357 55, 156653, 156657, 437 60, 437238, 437984, 437 89, H01L 2170

Patent

active

047286237

ABSTRACT:
A fabrication process for providing an epitaxial layer on a silicon substrate and over predefined insulator-capped islands which forms a self-aligned contact window in the epitaxial layer.
Application of the method to a three-dimensional dynamic random access memory (DRAM) device structure is shown, with an access transistor formed in monocrystalline silicon stacked on top of a trench capacitor. A fabrication method therefor is shown wherein the contact window for the source-to-trench connection is formed by self-aligned lateral epitaxial growth, followed by a contact-connection formation step using either a second epitaxial growth or a CVD refill and strapping process. The invention can be further applied to other device structures using the described principles, and more specifically to an inverter structure having the driver device stacked over the load-resistor as another example, which can be used as a basic building circuit unit for logic circuits and static-RAM cell.

REFERENCES:
patent: 4327476 (1982-05-01), Iwai et al.
patent: 4353086 (1982-10-01), Jaccodine et al.
patent: 4462847 (1984-07-01), Thompson et al.
patent: 4504332 (1985-03-01), Shinada
patent: 4522661 (1985-06-01), Morrison et al.
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4649625 (1987-03-01), Lu
Rom-Choudhury, "Selective Silicon Epitaxy an Orientation Dependence of Growth", J. Electrochem. Soc. May 73, pp. 664-668.
Muench, "Producing Semiconductor Devices by Oriented Over Growth", IBM TDB, vol. 10, No. 10, Mar. 1968.
Dynamic Ram Cell with Merged Drain and Storage IBM TDB, vol. 27, No. 11, Apr. 85, pp. 6694-6696.

Affiliated with

Also associated with

Rating

Fabrication method for forming a self-aligned contact window and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method for forming a self-aligned contact window and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for forming a self-aligned contact window and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-997809