Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1997-12-18
1999-08-10
Dang, Trung
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438 45, 438 91, 372 45, 257186, H01L 2120
Patent
active
059372745
ABSTRACT:
A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor Al.sub.a Ga.sub.b In.sub.1-a-b N.sub.x P.sub.y As.sub.z Sb.sub.1-x-y-z (0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, 0<x<1, 0.ltoreq.y<1, 0.ltoreq.z<1), and a method of making the semiconductor device and apparatus. For at least two semiconductor layers out of the plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is set at less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers. In a method for manufacturing a semiconductor device, Al, Ga, In, N, P, As and Sb as materials are prepared as materials for a semiconductor device, and a plurality of semiconductor layers are epitaxially grown by using said materials, including a layer of nitrogen-containing alloy semiconductor Al.sub.a Ga.sub.b In.sub.1-a-b N.sub.x P.sub.y As.sub.z Sb.sub.1-x-y-z (0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, 0<x<1, 0.ltoreq.y<1, 0.ltoreq.z<1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10.sup.-2 Torr or higher.
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Kondow Masahiko
Nakamura Hitoshi
Uomi Kazuhisa
Christianson Keith
Dang Trung
Hitachi , Ltd.
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