Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-12-06
2005-12-06
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000
Reexamination Certificate
active
06972433
ABSTRACT:
In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450° C., and, after crystallization, keeping the maximum processing temperature at or below 350° C.In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and reliably fabricate a large, high-quality liquid crystal display. Additionally, in applying the present invention to the fabrication of other electronic circuits as well, it is possible to both easily and reliably fabricate high-quality electronic circuits.
REFERENCES:
patent: 4297392 (1981-10-01), Higashi et al.
patent: 4741919 (1988-05-01), Takasaki
patent: 4812328 (1989-03-01), Saitoh et al.
patent: 5114770 (1992-05-01), Echizen et al.
patent: 5192717 (1993-03-01), Kawakami
patent: 5242530 (1993-09-01), Batey et al.
patent: 5289030 (1994-02-01), Yamazaki
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5372958 (1994-12-01), Miyasaka
patent: 5482749 (1996-01-01), Telford
patent: 5488000 (1996-01-01), Zhang
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 5624873 (1997-04-01), Fonash
patent: 5648276 (1997-07-01), Hara
patent: 5696386 (1997-12-01), Yamazaki
patent: 0 254 589 (1987-07-01), None
patent: 0 526 779 (1992-07-01), None
patent: 0 552 375 (1992-07-01), None
patent: 0 562 623 (1993-03-01), None
patent: 0 592 227 (1993-10-01), None
patent: 0 598 394 (1993-11-01), None
patent: 0 592 227 (1994-04-01), None
patent: A-58-164267 (1983-09-01), None
patent: A 58-164267 (1983-09-01), None
patent: A-59-204275 (1984-11-01), None
patent: A-63-115328 (1988-05-01), None
patent: A-2-137797 (1990-05-01), None
patent: A-4-7843 (1992-01-01), None
patent: A-4-245482 (1992-09-01), None
patent: A 5-55582 (1993-03-01), None
patent: A-5-55582 (1993-03-01), None
patent: A-6-97079 (1994-04-01), None
patent: A-6-132306 (1994-05-01), None
patent: A 6-132306 (1994-05-01), None
patent: A-6-16-3401 (1994-08-01), None
patent: A-6-232059 (1994-08-01), None
patent: A-6-275524 (1994-09-01), None
Ohshima, H., et al. “Full-Color LCDs with Completely Integrated Drivers Utilizing Low-Temperature Poly-SI TFTs”,SID 93 DIGEST1993, pp. 387-390.
S. Wolf, et al., Silicon Processing for the VLSI Era vol. 1, Lattice Press, 1986 (month not available).
Masatada Horiuchi et al, “One-Decade Reduction of PN-Junction Leakage Current Using Poly-SI Interlayered SOI Structures” Proceedings of the International Electron Devices Meeting, Wash, DC Dec. 5-8, 1993. Dec. 5, 1993, Institute of Electrical and Electronics Engineers, pp. 847-850, XP000481744.
Masumo K et al., “Low-Temperature Preparation of Poly-SI TFT by AR Laser Annealing at High Scanning Speed” Electronics & Communications in Japan, Part II—Electronics, vol. 76, No. 9, Sep. 1, 1993, pp. 112-116, XP000447931.
Yeckel, A. et al, “The Origin of Nonuniform Growth of LPCVD films from silane gase Mixtures” Journal of the Electrochemical Society, Jul. 1989, vol. 136, No. 7, ISSN 0013-4651.
Mitsutoshi Miyasaka et al, “Transistor and Physical Properties of Polycrystalline Silicon Films Prepared by Infralow-Pressure Chemical Vapor Deposition”, Journal of Applied Physics, vol. 74, No. 4, Aug. 15, 1993, pp. 2870-2885.
Patent Abstracts of Japan, vol. 018, No. 573 (E-1624), Nov. 2, 1994 & JP 06 216004 A (NEC Corp), Aug. 5, 1994.
Oliff & Berridg,e PLC
Seiko Epson Corporation
LandOfFree
Fabrication method for a thin film semiconductor device, the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication method for a thin film semiconductor device, the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for a thin film semiconductor device, the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3472078