Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-04-02
1993-08-31
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 61, 257350, 257352, H01L 2978
Patent
active
052411923
ABSTRACT:
The TFT structure formed in accordance with this invention includes a TFT body that has channel plug end sidewalls separated by a distance equal to or less than the width of the source/drain address lines and such that no residual doped semiconductor material adheres to the sidewalls. Similarly, the intrinsic semiconductor material layer is shaped such that no residual doped semiconductor material adheres to the sidewalls of the intrinsic semiconductor material layer underlying the channel plug ends.
REFERENCES:
patent: 5010027 (1991-04-01), Possin et al.
patent: 5075244 (1991-12-01), Sakai et al.
Possin George E.
Wei Ching-Yeu
General Electric Company
Ingraham Donald S.
James Andrew J.
Ngo Ngan Van
Snyder Marvin
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