Fabrication method for a self-aligned thin film transistor havin

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 61, 257350, 257352, H01L 2978

Patent

active

052411923

ABSTRACT:
The TFT structure formed in accordance with this invention includes a TFT body that has channel plug end sidewalls separated by a distance equal to or less than the width of the source/drain address lines and such that no residual doped semiconductor material adheres to the sidewalls. Similarly, the intrinsic semiconductor material layer is shaped such that no residual doped semiconductor material adheres to the sidewalls of the intrinsic semiconductor material layer underlying the channel plug ends.

REFERENCES:
patent: 5010027 (1991-04-01), Possin et al.
patent: 5075244 (1991-12-01), Sakai et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fabrication method for a self-aligned thin film transistor havin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method for a self-aligned thin film transistor havin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for a self-aligned thin film transistor havin will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2299751

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.