Fabrication method for a floating-gate field-effect transistor s

Details Fabrication method for a floating-gate field-effect transistor s Fabrication method for a floating-gate field-effect transistor s

1993-03-05

1993-11-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437195, H01L 21265

Patent

active

052665097

ABSTRACT:
A stacked floating-gate field-effect transistor ("FET") structure suitable for memory cells in a nonvolatile memory is fabricated according to a process in which a floating-gate layer is formed on a semiconductor substrate (30), oxide (42) is formed along the sidewalls (35) of the floating gate (18) extending in the channel-length direction, and an oxide-nitride-oxide ("ONO") composite layer (44) is formed along the top of the structure, including the floating gate and the sidewall oxide. The ONO composite layer and the sidewall oxide act as an isolation dielectric between the floating gate and a control gate (20) formed on top of the ONO layer.

REFERENCES:
patent: 4376947 (1983-03-01), Chiu et al.
patent: 4426764 (1984-01-01), Kosa et al.
patent: 4455568 (1984-06-01), Shiota
patent: 4458407 (1984-07-01), Hoeg, Jr. et al.
patent: 4466081 (1984-08-01), Masuoka
patent: 4524508 (1985-06-01), Sato
patent: 4616402 (1986-10-01), Mori
patent: 4720323 (1988-01-01), Sato
patent: 4763177 (1988-08-01), Paterson
patent: 4881108 (1989-11-01), Yoshikawa
patent: 4935378 (1990-06-01), Mori
patent: 5006481 (1991-04-01), Chan et al.
patent: 5124280 (1992-06-01), Wei et al.
patent: 5175118 (1992-12-01), Yoneda
patent: 5179034 (1993-01-01), Mori et al.
patent: 5210044 (1993-05-01), Yoshikawa
patent: 5210047 (1993-05-01), Woo et al.

Affiliated with

Also associated with

Rating

Fabrication method for a floating-gate field-effect transistor s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method for a floating-gate field-effect transistor s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for a floating-gate field-effect transistor s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2095599