Fabrication method for a field emission display emitter

Details Fabrication method for a field emission display emitter Fabrication method for a field emission display emitter

1998-07-22

1999-11-23

Utech, Benjamin

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

514700, H01J 130

Patent

active

059899760

ABSTRACT:
A fabrication method for a sharp tip emitter first includes a trench formed on a semiconductor substrate. Next, an isolating layer is deposited over the substrate by high-density plasma chemical vapor deposition (HDP CVD). A V-shaped groove is naturally formed on the isolating layer around the trench. Next, a silicon layer is formed over the isolating layer and an ion implantation is performed into the silicon layer over the V-shaped groove. Next, a semiconductor layer is formed over the substrate. Next, a high temperature thermal process is performed to drive the implanted ions into the semiconductor layer. Next, the isolating layer is removed so that the silicon layer is separated from the substrate. Then, the tip emitter is formed.

REFERENCES:
patent: 5160492 (1992-11-01), Wang et al.
patent: 5783905 (1998-07-01), Greschner et al.

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