Fabrication method for a double trench memory cell device

Details Fabrication method for a double trench memory cell device Fabrication method for a double trench memory cell device

1991-03-04

1991-11-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437 47, 437 48, 437 60, 437203, 437233, 437235, 437919, H01L 2170

Patent

active

050647776

ABSTRACT:
A method is described for fabricating a novel double trench memory structure including a shallow trench access transistor adjacent to a deep trench storage capacitor. The described three-dimensional DRAM cell structure consists of shallow trench access transistors and deep trench storage capacitors in a n-well disposed on a semiconductor substrate. In the fabrication method, the vertical access transistors are built adjacent to the one side of one deep substrate-plate trench storage capacitor. Arrangement of the access transistors and trench storage capacitor are different from that of standard single trench cells. The layout of the double trench cell not only provides the advantages of small size, high packing density, lower soft error rate, and higher noise immunity for storage capacitor, but also leads to better performance and an efficient sensing scheme. The structure may be fabricated for p-channel or n-channel embodiments.

REFERENCES:
patent: 4252579 (1981-02-01), Hoch et al.
patent: 4649625 (1987-03-01), Lu
patent: 4672410 (1987-06-01), Miura et al.
patent: 4713678 (1987-12-01), Womack et al.
patent: 4728623 (1988-03-01), Lu et al.
patent: 4751557 (1988-06-01), Sunami et al.
patent: 4769786 (1988-09-01), Garnache et al.
patent: 4786954 (1988-11-01), Morie et al.
patent: 4791463 (1988-12-01), Malhi
patent: 4797373 (1989-01-01), Malhi et al.
patent: 4801988 (1989-01-01), Kenney
patent: 4830978 (1989-05-01), Teng et al.
patent: 4833094 (1989-05-01), Kenney et al.
patent: 4873205 (1989-10-01), Critchlow et al.
patent: 4916524 (1990-04-01), Teng et al.
patent: 4927779 (1990-05-01), Dhong et al.
patent: 4945069 (1990-07-01), Carter
Nicky C. C. Lu, "Advanced Cell Structures for Dynamic RAMS" IEEE Circuits and Devices Magazine, Jan. 1, 1989 pp. 22-35.

Affiliated with

Also associated with

Rating

Fabrication method for a double trench memory cell device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method for a double trench memory cell device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for a double trench memory cell device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1012907