Fabrication method for a CCD frame transfer photosensitive matri

Details Fabrication method for a CCD frame transfer photosensitive matri Fabrication method for a CCD frame transfer photosensitive matri

1990-01-29

1991-03-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 2, 437 51, 437 52, 357 231, 357 24, 357 30, H01L 2100, H01L 2102, H01L 2978

Patent

active

049977849

ABSTRACT:
The disclosed photosensitive matrix comprises, in a standard way, a P type semiconductor substrate, an N type channel layer separated by narrow insulating zones into a plurality of columns and, on a thin layer of insulating oxide placed on the channel layer, a network of transfer grids extending perpendicularly to the insulating zones, dividing the columns into a large number of "pixels". According to the invention, the matrix has, between the substrate and the channel layer, a weakly doped P type base layer, in which are buried anti-blooming diodes consisting of a narrow, strong doped N type drain extending in a direction parallel to the insulation zones. Beneath the drain, there is a strongly doped, P type protective screen. The arrangement gives an optical aperture of the matrix close to unity and a spectral response that is improved towards the red side of the spectrum owing to the thickness of the base layer.

REFERENCES:
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patent: 4697329 (1987-10-01), Boudewijns
patent: 4748486 (1988-05-01), Miyatake
patent: 4851890 (1989-07-01), Miyatake
Baker, K., CCD Array Forms Random-Access Memory, Electronics, Nov. 13, 1975, pp. 138-139.

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