Fabrication method for a capacitor having high capacitance

Details Fabrication method for a capacitor having high capacitance Fabrication method for a capacitor having high capacitance

1999-11-01

2000-09-05

Nelms, David

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including passive device

438396, H01L 218222

Patent

active

061142131

ABSTRACT:
A fabrication method for a capacitor having high capacitance that increases capacitance of a capacitor and consequently decreases defective semiconductor devices includes: forming a doped first polysilicon layer pattern on a semiconductor substrate; forming a silicide film pattern on the first polysilicon layer pattern; annealing the semiconductor substrate; sequentially forming a first insulating film and a second insulating film over the silicide film pattern; forming a contact hole to expose a portion of the silicide film pattern and then sequentially placing the semiconductor substrate in an etchant solution and a buffered etchant solution to remove a portion of the first insulating film formed on the silicide film pattern; forming a first capacitor electrode on a portion of an upper surface of the second insulating film pattern and the silicide film pattern, and at inner walls of the contact hole; and forming a dielectric layer on an outer surface of the lower electrode and then a second capacitor electrode.

REFERENCES:
patent: Re36261 (1999-08-01), Chin et al.
patent: 5223448 (1993-06-01), Su
patent: 5326714 (1994-07-01), Liu et al.
patent: 5374576 (1994-12-01), Kimura et al.

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