Fabrication method and structure of an ITO anode containing...

Details Fabrication method and structure of an ITO anode containing... Fabrication method and structure of an ITO anode containing...

2006-06-21

2009-11-10

Xu, Ling (Department: 1794)

Stock material or miscellaneous articles

Composite

Of quartz or glass

C428S690000, C428S917000, C313S504000, C313S506000

Reexamination Certificate

active

07615285

ABSTRACT:
A fabrication method of an indium tin oxide (ITO) anode containing point nickel for an organic light emitting diode (OLED) to selectively light includes various processes of preparing an ITO substrate with an anode having plural point grooves, of forming a nickel film on the anode, and of grinding the nickel film to leave the point grooves fitted with nickel. Therefore, the nickel spots of the ITO anode are lit up earlier than the pure ITO anode when the OLED is turn on. Because the nickel spots have a lower resistance, current can aggregate in these spots collectively, reducing demerit of cross-talk happening often in a conventional passive OLED panel circuit. The structure of the OLED includes an ITO substrate with an anode provided point grooves deposited with nickel, a hole transport layer on the anode, and an electron transport layer on the hole transport layer.

REFERENCES:
patent: 2004/0245531 (2004-12-01), Fuii et al.
patent: 2008/0248240 (2008-10-01), Shi

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