Fabrication method and structure for field isolation in field ef

Details Fabrication method and structure for field isolation in field ef Fabrication method and structure for field isolation in field ef

1988-03-28

1990-07-17

James, Andrew J.

Fishing, trapping, and vermin destroying

357 49, 357 2311, 437 69, H01L 2934

Patent

active

049424491

ABSTRACT:
A method for forming a field oxide isolation region for a field effect transistor for use in integrated circuit chip devices includes process steps which preserve planarity while at the same time providing an increased degree of radiation hardness. The bird's beak region of the device is provided with both thermally grown and deposited oxide layers in a planarity preserving process.

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K. Kurosawa et al., "A New Bird's-Beak Free Field Isolation Technology for VLSI Devices", Int. Electron Devices Meeting, 1981, pp. 384-387.
T. Shibata et al., "A Simplified BOX (Buried Oxide) Isolation Technology for Megabit Dynamic Memories", Int. Electron Devices Meeting, Dec. 1983, pp. 27-30.
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