Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-06-17
2008-12-30
Tran, Binh X (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S747000, C438S748000, C438S753000, C216S024000
Reexamination Certificate
active
07470622
ABSTRACT:
A method of fabricating silicon micro-mirrors includes etching from opposite sides of a silicon wafer with a polished surface on at least one of the opposite sides, to form silicon bars each having a parallelogram-shaped cross-section and including a portion of the polished surface. At least one of the silicon bars is mounted on a mounting surface. The polished surface of the silicon bar may be used to reflect optical signals.
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patent: 6205274 (2001-03-01), Zhou
patent: 6900922 (2005-05-01), Aubuchon
patent: 2002/0094152 (2002-07-01), Feierabend et al.
patent: 2002/0181852 (2002-12-01), Husain et al.
patent: 2003/0054646 (2003-03-01), Yotsuya
patent: 2004/0008401 (2004-01-01), Szczepanek et al.
patent: 2004/0145822 (2004-07-01), Pan et al.
Fish & Richardson P.C.
Hymite A/S
Tran Binh X
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