Fabrication and test methods and systems

Optics: measuring and testing – Inspection of flaws or impurities – Surface condition

Reexamination Certificate

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C356S237500, C356S369000, C438S016000, C438S014000

Reexamination Certificate

active

07821627

ABSTRACT:
Methods and systems for fabricating and testing semiconductor devices are disclosed. In one embodiment, a method of forming a material includes providing a first workpiece, forming a material on the first workpiece using a first process condition, and measuring a defect state of the material using a test that utilizes a monochromatic light source. If the defect state is below a predetermined value, the material is formed on at least one second workpiece using the first process condition.

REFERENCES:
patent: 4211488 (1980-07-01), Kleinknecht
patent: 5042952 (1991-08-01), Opsal et al.
patent: 6147507 (2000-11-01), Shabde et al.
patent: 6884640 (2005-04-01), Peterson et al.
patent: 7446474 (2008-11-01), Maldonado et al.
patent: 7465591 (2008-12-01), Borden et al.
patent: 7570353 (2009-08-01), Li
patent: 2004/0224427 (2004-11-01), Yu et al.
patent: 2005/0196892 (2005-09-01), Yamagata et al.
patent: 2009/0161943 (2009-06-01), Yamashita et al.
Hayzelden, C., “Gate Dielectric Metrology,” Handbook of Silicon Semiconductor Metrology, 2001, pp. 17-47, Chapter 2, Marcel Dekker, Inc., New York, NY.
“Spectroscopic Ellipsometers and Thin Film Characterization,” http://www.jawoollam.com, downloaded Dec. 9, 2005, 2 pp., J. A. Woollam Co., Inc., Lincoln, NE.
Takeuchi, H., et al., “Observation of Bulk HfO2Defects by Spectroscopic Ellipsometry,” J. Vac. Sci. Technol. A, Jul./Aug. 2004, pp. 1337-1341, vol. 22, No. 4, American Vacuum Society, Research Triangle Park, NC.
“WVASE 32® Elipsometry Analysis Software,” http://www.jawoollam.com, downloaded Dec. 9, 2005, 2 pp., J. A. Woollam Co., Inc., Lincoln, NE.
Yu, P. Y., et al., “Fundamentals of Semionductors: Physics and Materials Properties,” Third, Revised and Enlarged Ed., p. 249, Springer.

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