Fabrication and test methods and systems

Details Fabrication and test methods and systems Fabrication and test methods and systems

2005-12-16

2009-08-04

Pham, Hoa Q (Department: 2886)

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

C356S237500

Reexamination Certificate

active

07570353

ABSTRACT:
Methods and systems for fabricating and testing semiconductor devices are disclosed. In one embodiment, a method of forming a material includes providing a first workpiece, forming a material on the first workpiece using a first process condition, and measuring a defect state of the material using a test that utilizes a monochromatic light source. If the defect state is below a predetermined value, the material is formed on at least one second workpiece using the first process condition.

REFERENCES:
patent: 4211488 (1980-07-01), Kleinknecht
patent: 5042952 (1991-08-01), Opsal et al.
patent: 6147507 (2000-11-01), Shabde et al.
patent: 6884640 (2005-04-01), Peterson et al.
patent: 7446474 (2008-11-01), Maldonado et al.
patent: 7465591 (2008-12-01), Borden et al.
Hayzelden, C., “Gate Dielectric Metrology,” Handbook of Silicon Semiconductor Metrology, 2001, pp. 17-47, Chapter 2, Marcel Dekker, Inc., New York, NY.
“Spectroscopic Ellipsometers and Thin Film Characterization,” http://www.jawoollam.com, downloaded Dec. 9, 2005, 2pp., J.A. Woollam Co., Inc., Lincoln, NE.
Takeuchi, H., et al., “Observation of Bulk HfO2Defects by Spectroscopic Ellipsometry,” J. Vac. Sci. Technol. A, Jul./Aug. 2004, pp. 1337-1341, vol. 22, No. 4, American Vacuum Society, Research Triangle Park, NC.
“WVASE 32® Elipsometry Analysis Software,” http://www.jawoollam.com, downloaded Dec. 9, 2005, 2 pp., J. A. Woollam co., Inc., Lincoln, NE.

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