Fabrication and method of producing silicon films

Details Fabrication and method of producing silicon films Fabrication and method of producing silicon films

1997-12-22

1999-09-14

Meeks, Timothy

Coating processes

Direct application of electrical, magnetic, wave, or...

Electrical discharge

427585, 427588, 20419238, C23C 1624

Patent

active

059520612

ABSTRACT:
The present invention is an apparatus and method for the fabrication of high quality silicon films by deposition of a silicon vapor onto a substrate. The silicon film fabrication apparatus includes a chamber, a crucible having an anode for melting a silicon metal, an anode for generating a DC arc discharge plasma, a substrate holder facing the crucible, and a heater for heating a substrate arranged in the substrate holder. The apparatus also includes a variable DC power supply, a cathode element including an electrode plate for generating the DC arc discharge plasma, a gas intake pipe penetrating through the electrode plate into the chamber, and an exhaust pipe having a valve facing the gas intake pipe. The silicon film is fabricated by disposing a substrate in a chamber, introducing hydrogen gas into the chamber, generating the DC arc discharge plasma, evaporating the silicon metal in the chamber, and depositing the silicon vapor on the substrate after the vapor passes through the DC arc discharge plasma.

REFERENCES:
patent: 4505947 (1985-03-01), Vukanovic et al.
patent: 4929322 (1990-05-01), Sue et al.

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