Fabricating zinc oxide semiconductor using hydrolysis

Details Fabricating zinc oxide semiconductor using hydrolysis Fabricating zinc oxide semiconductor using hydrolysis

2006-08-02

2009-02-17

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S483000, C257SE21591

Reexamination Certificate

active

07491575

ABSTRACT:
A process for fabricating at least one semiconductor layer of an electronic device including: performing on a composition including a hydrolyzable zinc compound a number of activities including: (a) hydrolyzing at least a portion of the hydrolyzable zinc compound to form zinc oxide; (b) liquid depositing; and (c) optionally heating, wherein the activities (a), (b), and (c) are each accomplished a number of times in any effective arrangement, resulting in the at least one semiconductor layer comprising the zinc oxide.

REFERENCES:
patent: 6570183 (2003-05-01), Park et al.
patent: 2006/0057766 (2006-03-01), Jia et al.
patent: 2006/0135743 (2006-06-01), Park et al.
patent: 2006/0275948 (2006-12-01), Takamatsu et al.
patent: 2007/0176199 (2007-08-01), Shibata
E. Fortunato et al., “Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature,”Adv. Mater., vol. 17, No. 5, pp. 590-594 (Mar. 8, 2005).
B. J. Norris et al., “Spin coated zinc oxide transparent transistors,”J. Phys. D: Appl. Phys., vol. 36, pp. L105-L107 (2003).
B. Sun et al., “Solution-Processed Zinc Oxide Field-Effect Transistors Based on Self-Assembly of Colloidal Nanorods,”Nano Lett., vol. 5, No. 12, pp. 2408-2413 (2005).

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