Fabricating strained channel epitaxial source/drain transistors

Details Fabricating strained channel epitaxial source/drain transistors Fabricating strained channel epitaxial source/drain transistors

2007-04-24

2008-09-23

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S065000, C257S075000, C257SE29255

Reexamination Certificate

active

07427775

ABSTRACT:
The mobility of carriers may be increased in strained channel epitaxial source/drain transistors. Doped silicon material may be blanket deposited after removing ion implanted source/drain regions. The blanket deposition forms amorphous films over non-source/drain areas and crystalline films in source/drain regions. By using an etch which is selective to amorphous silicon, the amorphous material may be removed. This may avoid some problems associated with selective deposition of the doped silicon material.

REFERENCES:
patent: 7339215 (2008-03-01), Chidambaram
patent: 2002/0034864 (2002-03-01), Mizushima et al.
patent: 2004/0097047 (2004-05-01), Natzle et al.

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