Fabricating semiconductor devices to prevent alloy spiking

Details Fabricating semiconductor devices to prevent alloy spiking Fabricating semiconductor devices to prevent alloy spiking

1985-11-22

1988-03-29

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 57, H01L 21425

Patent

active

047343834

ABSTRACT:
After contact holes for the P- and N-type source or drain regions of P- and N-channel MOSFETs have been made at a common step, an N-type impurity is ion-implanted into at least the N-type source or drain regions through the contact holes. The N-type impurity is annealed to form an N-type region which is deeper than the N-type source or drain regions. During the annealing treatment, the N-type source or drain regions are covered with an insulating film.

REFERENCES:
patent: 4033026 (1977-07-01), Pashley
patent: 4433468 (1984-02-01), Kawamata
patent: 4512073 (1985-04-01), Hsu
patent: 4553315 (1985-11-01), McCarty
patent: 4554726 (1985-11-01), Hillenius et al.
patent: 4577391 (1986-03-01), Hsia et al.
patent: 4590663 (1986-05-01), Haken
Nikkei Electronics Microdevices, Nikkei McGraw Hill Co., Ltd., Japan, Aug. 23, 1983, p. 122.

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