Fabricating semiconductor device with polysilicon protection lay

Details Fabricating semiconductor device with polysilicon protection lay Fabricating semiconductor device with polysilicon protection lay

1986-07-23

1987-08-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG11, 148DIG124, 148DIG51, 148DIG117, 357 34, 357 59, 156643, 156653, 437967, H01L 21308

Patent

active

046867627

ABSTRACT:
A method for making a semiconductor device having transistors comprising the active regions which are protected by polysilicon layer during the whole process from damages due to the other processing, that is dry etching, etc. and a minimized base region so as to provide a high operating speed and a minimium size thereof as well as lowest power consumption features.

REFERENCES:
IEEE Journal of Solid-State Circuits, vol. SC-20, No. 1, Feb. 1985.
IEEE Transactions on Electron Devices, vol. ED-30, No. 6, Jun. 1983.
IEEE Transaction on Electorn Device, vol. ED-28, No. 9, Sep. 1981.
IEEE Journal of Solid-State Circuits, vol. SC-14, No. 2, Apr. 1979.

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