Fabricating semiconductor device utilizing a physical ion etchin

Details Fabricating semiconductor device utilizing a physical ion etchin Fabricating semiconductor device utilizing a physical ion etchin

1975-10-28

1977-05-24

Powell, William A.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156625, 156643, 156664, 156655, 156656, H01L 21312

Patent

active

040254119

ABSTRACT:
An even surface of an SiO.sub.2 layer on an Si body, whose surface is uneven, is obtained by the steps of forming a photoresist layer of KTFR (Trade name of Eastman Kodak Chemical Company) on the uneven surface of the SiO.sub.2 layer so as to have a thickness sufficient cover the unevenness of the surface and etching the SiO.sub.2 layer with said KTFR layer by rf sputter etching so as to expose a predetermined surface of the SiO.sub.2 layer.

REFERENCES:
patent: 3506506 (1970-04-01), Pennabaker
patent: 3700497 (1972-10-01), Epifano et al.
patent: 3740280 (1973-06-01), Ronen
patent: 3791858 (1974-02-01), McPherson et al.
patent: 3816196 (1974-06-01), LaCombe
patent: 3919066 (1975-11-01), Johannas et al.

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