Fabricating porous silicon carbide

Details Fabricating porous silicon carbide Fabricating porous silicon carbide

1993-11-30

1994-12-27

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412955, 20412975, C25F 312

Patent

active

053762410

ABSTRACT:
The formation of porous SiC occurs under electrochemical anodization. A sample of SiC is contacted electrically with nickel and placed into an electrochemical cell which cell includes a counter electrode and a reference electrode. The sample is encapsulated so that only a bare semiconductor surface is exposed. The electrochemical cell is filled with an HF electrolyte which dissolves the SiC electrochemically. A potential is applied to the semiconductor and UV light illuminates the surface of the semiconductor. By controlling the light intensity, the potential and the doping level, a porous layer is formed in the semiconductor and thus one produces porous SiC.

REFERENCES:
patent: 3254280 (1966-05-01), Wallace
patent: 4028149 (1977-06-01), Deines et al.
patent: 5227034 (1993-07-01), Stein et al.

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